Разширено търсене
Автор да съдържа M. Vojs
Каталог "Библиографии" | Периодични издания
Carrier control in polycrystalline ZnO: Ga thin films via nitrogen implantation
// <I>ECS j.<D> of Solid state science and technology, 2012, № 1 (5), p. P237-P240.
K. Shtereva; I. Novotny; V. Tvarozek;
M. Vojs;
S. Flickyngerova;
P. Sutta;
A. Vincze;
M. Milosavljevic;
Ch. Jeynes;
N. Peng
и др.
Каталог "Библиографии" | Статии от книги - библиография
Effect of annealing on properties of gallium-nitrogen co-doped zinc oxide thin films prepared by sputtering and ion implantation
// <I>ARCOM' 2012<D> : 18th International conference on "Applied physics of condensed matter APCOM' 2012", Hotel Patria, Strbske Pleso, Slovakia : Proc. - Zilina : Univ. of Zillina, 2012, p. 207-210.
S. Flickyngerova; M. Vojs; K. Shtereva;
P. Sutta;
A. Vincze;
M. Milosavljevic;
Ch. Jeynes;
N. Peng;
I. Novotny;
V. Tvarozek
и др.
Каталог "Библиографии" | Периодични издания
Effect of annealing on properties of sputtered and nitrogen-implanted ZnO: Ga thin films
// <I>EPJ<D> Photovoltaics, 2012, № 3 35003, p. 1-6.
K. Shtereva; V. Tvarozek; I. Novotny;
P. Sutta;
M. Milosavljevic;
A. Vincze;
M. Vojs;
S. Flickyngerova
и др.
Каталог "Библиографии" | Статии от книги - библиография
Nitrogen doping in sputtered Ga-doped Zinc oxide thin films
// <I>IVC' 2013<D> : Proceedings of 19 International Vacuum congress IVC-19, Paris, France, 9-13 september 2013.
K. Shtereva; V. Tvarozek; I. Novotny;
S. Flickyngerova;
A. Vincze;
M. Vojs;
Ch. Jeynes;
N. Peng
и др.
Каталог "Библиографии" | Статии от книги - библиография
Electrical and optical studies of N-doped sputtered ZnO thin films
// <I>JVC' 2015<D> : 15th Joint Vacuum Conference JVC' 2015, Vienna, Austria, june 15-20, 2014, p. 186.
Каталог "Библиографии" | On line част от книги
Electrical and optical characterization of sputtered ZnO:Ga thin films doped with nitrogen [Електронен ресурс]
// <I>ISSE 2017<D> : Proc. of 40th International spring seminar on ''Electronics technology ISSE'', Sofia, Bulgaria, 10-14 may 2017. - New York : IEEE, 2017, DOI: 10.1109/ISSE.2017.8000879.